Liquid crystal display

ABSTRACT

A liquid crystal display is disclosed. The liquid crystal display includes a data line arranged in a column direction, a first pixel electrode that is positioned on the left side of the data line on a first line, a second pixel electrode that is positioned on the right side of the data line in a second line underlying the first line, a first gate line that is arranged between the first line and the second line in a line direction perpendicular to the column direction, a second gate line that is arranged between the first line and the second line in the line direction, the second gate line underlying the first gate line, a first thin film transistor that is positioned on the left side of the data line on the first line to supply a first data voltage received from the data line to the first pixel electrode in response to a gate pulse received from the first gate line, and a second thin film transistor that is positioned on the right side of the data line on the first line, crosses the first gate line to be connected to the second pixel electrode, and supplies a second data voltage received from the data line to the second pixel electrode in response to a gate pulse received from the second gate line.

This application claims the benefit of Korea Patent Application No.10-2008-0048295 filed on May 23, 2008, which is hereby incorporated byreference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

An exemplary embodiment of the invention relates to a liquid crystaldisplay.

2. Discussion of the Related Art

Active matrix type liquid crystal displays display a moving pictureusing a thin film transistor (TFT) as a switching element. The activematrix type liquid crystal displays have been implemented televisions aswell as display devices in portable devices, such as office equipmentand computers, because of the thin profile of the active matrix typeliquid crystal displays. Accordingly, cathode ray tubes (CRT) are beingreplaced by active matrix type liquid crystal displays.

The active matrix type liquid crystal display includes data lines andgate lines crossing each other, and liquid crystal cells arranged atcrossings of the data lines and the gate lines in a matrix format. Athin film transistor (TFT) is formed at each crossing of the data linesand the gate lines.

The liquid crystal display periodically inverts a polarity of a datavoltage and supplies the inverted data voltage so as to reduce thedegradation of liquid crystals. As above, a method for driving theliquid crystal display while the polarity of the data voltage isinverted is called an inversion system. Examples of the inversion systeminclude a line inversion system, a column inversion system, and a dotinversion system.

In the line inversion system, the polarity of the data voltage isinverted every 1 line and is inverted every 1 frame period. In the lineinversion system, because the adjacent liquid crystal cells in a linedirection are different from each other in the data charge amount, astripped pattern (i.e., a horizontal stripped pattern) may appear in theline direction.

In the column inversion system, the polarity of the data voltage isinverted every 1 column and is inverted every 1 frame period. In thecolumn inversion system, because the adjacent liquid crystal cells in acolumn direction are different from each other in the data chargeamount, a stripped pattern (i.e., a vertical stripped pattern) mayappear in the column direction.

In the dot inversion system, the polarity of the data voltage suppliedto the adjacent liquid crystal cells in the line direction is inverted,and the polarity of the data voltage supplied to the adjacent liquidcrystal cells in the column direction is inverted. Further, the polarityof the data voltage is inverted every 1 frame period. Because flickersgenerated between adjacent pixels in vertical and horizontal directionsoffset each other in the dot inversion system, the dot inversion systemcan provide more excellent image quality than the line and columninversion systems. However, because the polarity of the data voltagesupplied to the data lines has to be inverted in the vertical andhorizontal directions in the dot inversion system, the change amount ofthe data voltage (i.e., a frequency of a data signal) in the dotinversion system is larger than the line and column inversion systems.Therefore, power consumption of a data drive circuit increase, and alsothe amount of heat generated in the data drive circuit increases.

Recently, as shown in FIG. 1, an inversion system in which data voltagesreceived from one data line are alternately supplied to adjacent liquidcrystal cells in a line direction has been proposed. Because a chargepath of the data voltages is similar to a Z-shape, the inversion systemis called a Z-shaped inversion system. In the Z-shaped inversion system,thin film transistors are formed on left and right sides of each dataline, and a pixel electrode of a liquid crystal cell is connected toeach thin film transistor.

In the Z-shaped inversion system, when a first gate pulse is applied toa first gate line G1, a first TFT T1 is turned on and the data voltagereceived from a first data line D1 is supplied to a first pixelelectrode PIX1 positioned on the left side of the first data line D1.Sequentially, when a second gate pulse is applied to a second gate lineG2, a second TFT T2 is turned on and the data voltage received from thefirst data line D1 is supplied to a second pixel electrode PIX2positioned on the right side of the first data line D1. In the same way,when third and fourth gate pulses are sequentially applied to third andfourth gate lines G3 and G4, third and fourth TFTs T3 and T4 are turnedon. Then, after the data voltage is supplied to a third pixel electrodePIX3, the data voltage is supplied to a fourth pixel electrode PIX4.

In the Z-shaped inversion system, the number of data lines can bereduced by half, and a frequency of the data voltage can be reduced.However, because the two gate lines are formed between the adjacentpixel electrodes in a column direction, the previously charged datavoltage may be changed. For example, when a gate high voltage of thegate pulse is applied to the second gate line G2 in a state where thefirst pixel electrode PIX1 has been already charged to the data voltage,a voltage level of the first pixel electrode PIX1 may be changed by thecoupling between the first pixel electrode PIX1 and the second gate lineG2. This reason is that the gate high voltage changes a voltage of astorage capacitor for holding a voltage of the first pixel electrodePIX1 by a short distance Δ1 between the first pixel electrode PIX1 andthe second gate line G2. If the distance Δ1 between the first pixelelectrode PIX1 and the second gate line G2 increases, the coupling maybe reduced, but an aperture ratio may be reduced.

Further, in the Z-shaped inversion system, because the data voltagecharged to the liquid crystal cells of one of an R column, a G column,and a B column is different from the data voltage charged to the liquidcrystal cells of the other columns depending on a polarity of the datavoltage and the charge order of the data voltage, any one color may beseen more remarkably than the other colors on the display image.

SUMMARY OF THE INVENTION

An exemplary embodiment of the invention provides a liquid crystaldisplay capable of securing a sufficient aperture ratio and improvingthe display quality without changing a voltage of a storage capacitor.

Additional features and advantages of the exemplary embodiments of theinvention will be set forth in the description which follows, and inpart will be apparent from the description, or may be learned bypractice of the exemplary embodiments of the invention. The objectivesand other advantages of the exemplary embodiments of the invention willbe realized and attained by the structure particularly pointed out inthe written description and claims hereof as well as the appendeddrawings.

In one aspect, a liquid crystal display comprises a data line that isarranged in a column direction to receive a data voltage, a first pixelelectrode that is positioned on the left side of the data line on afirst line, a second pixel electrode that is positioned on the rightside of the data line in a second line underlying the first line, afirst gate line that is arranged between the first line and the secondline in a line direction perpendicular to the column direction, a secondgate line that is arranged between the first line and the second line inthe line direction, the second gate line underlying the first gate line,a first thin film transistor that is positioned on the left side of thedata line on the first line to supply a first data voltage received fromthe data line to the first pixel electrode in response to a gate pulsereceived from the first gate line, and a second thin film transistorthat is positioned on the right side of the data line on the first line,crosses the first gate line to be connected to the second pixelelectrode, and supplies a second data voltage received from the dataline to the second pixel electrode in response to a gate pulse receivedfrom the second gate line.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of embodiments of the inventionas claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 shows a liquid crystal display driven in a related art Z-shapedinversion system;

FIG. 2 is a block diagram of a liquid crystal display according to anexemplary embodiment of the invention;

FIG. 3 is an equivalent circuit diagram showing a structure of a liquidcrystal display panel, a polarity of a data voltage, and a charge path;

FIG. 4 is a waveform diagram illustrating the data voltage shown in FIG.3 and a gate pulse;

FIG. 5 is another equivalent circuit diagram showing a structure of aliquid crystal display panel, a polarity of a data voltage, and a chargepath;

FIG. 6 is a waveform diagram illustrating the data voltage shown in FIG.5 and a gate pulse;

FIG. 7 is a plane view showing a lower glass substrate of the liquidcrystal display panel according to the exemplary embodiment of theinvention; and

FIG. 8 is a cross-sectional view of a storage capacitor and a thin filmtransistor taken along line I-I′ of FIG. 7.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail embodiments of the inventionexamples of which are illustrated in the accompanying drawings.

As shown in FIG. 2, a liquid crystal display according to an exemplaryembodiment of the invention includes a liquid crystal display panel 10,a timing controller 11, a data drive circuit 12, and a gate drivecircuit 13.

The liquid crystal display panel 10 includes an upper glass substrate, alower glass substrate, and a liquid crystal layer between the upper andlower glass substrates. The lower glass substrate of the liquid crystaldisplay panel 10 includes data lines D1 to Dm in a column direction andgate lines G1 to Gn in a line direction that cross the data lines D1 toDm. The lower glass substrate further includes common lines positionedbetween the data lines D1 to Dm in a direction parallel to the datalines D1 to Dm, and a storage electrode electrically connected to thecommon lines to receive a common voltage Vcom. The common lines areconnected to a common voltage source generating the common voltage Vcom.The common line and the storage electrode are shown in FIGS. 7 and 8.The gate lines G1 to Gn, as shown in FIGS. 3 and 5, are formed in astructure in which the odd-numbered gate lines and the even-numberedgate lines adjacent to the odd-numbered gate lines are formed in pairsbetween adjacent pixel electrodes 1 in the column direction. Liquidcrystal cells Clc are arranged on a pixel array of the liquid crystaldisplay panel 10 in a matrix format at crossings of the data lines D1 toDm and the gate lines G1 to Gn. The lower glass substrate furtherincludes a thin film transistor formed at each crossing of the datalines D1 to Dm and the gate lines G1 to Gn, the pixel electrode 1 of theliquid crystal cell Clc connected to the thin film transistor one toone, and a storage capacitor Cst, and the like. The upper glasssubstrate of the liquid crystal display panel 10 includes a blackmatrix, a color filter, and a common electrode 2.

The common electrode 2 is formed on the upper glass substrate in avertical electric drive manner, such as a twisted nematic (TN) mode anda vertical alignment (VA) mode. The common electrode 2 and the pixelelectrode 1 are formed on the lower glass substrate in a horizontalelectric drive manner, such as an in-plane switching (IPS) mode and afringe field switching (FFS) mode. Polarizing plates each having opticalaxes that cross at a right angle are attached respectively to the upperand lower glass substrates. Alignment layers for setting a pre-tiltangle of the liquid crystal in an interface contacting the liquidcrystal are respectively formed on the upper and lower glass substrates.

A structure of each of the data line, the gate line, the pixel electrode1, and the thin film transistor on the lower glass substrate is shown inFIGS. 3 and 5. Although FIGS. 3 and 5 show the structure to which thevertical electric drive manner is applied, the exemplary embodiment ofthe invention is not limited thereto. The exemplary embodiment of theinvention may be applied to any liquid crystal mode.

The timing controller 11 rearranges digital video data RGB in the chargeorder of a data voltage in the liquid crystal display panel 10 as shownin FIGS. 3 to 6, and then supplies the rearranged digital video data RGBto the data drive circuit 12. The timing controller 11 receives a timingsignal such as a data enable signal DE and a dot clock signal CLK, andgenerates a data timing control signal for controlling operation timingof the data drive circuit 12 and a gate timing control signal forcontrolling operation timing of the gate drive circuit 13.

The data timing control signal includes a source start pulse SSP, asource sampling clock signal SSC, a source output enable signal SOE, apolarity control signal POL, and the like. The source start pulse SSPindicates a start pixel in 1 horizontal line to which data will bedisplayed. If the data transmission between the timing controller 11 andthe data drive circuit 12 is performed using mini low-voltagedifferential signaling (LVDS), the digital video data RGB and mini LVDSclock are transmitted to the data drive circuit 12. When the data istransmitted using the mini LVDS, the timing controller 11 does not needto generate a separate source start pulse because a pulse following areset pulse of the mini LVDS clock serves as a source start pulse. Thesource sampling clock signal SSC controls a data latch operation insidethe data drive circuit 12 based on a rising or falling edge. The sourceoutput enable signal SOE controls an output of the data drive circuit12. A logic state of the polarity control signal POL is inverted every 1horizontal period or 2 horizontal periods, and a phase of the polaritycontrol signal POL is inverted every N frame periods, where N is apositive integer.

The gate timing control signal includes a gate start pulse GSP, a gateshift clock signal GSC, a gate output enable signal GOE, and the like.The gate start pulse GSP indicates a scan start line of a scan operationduring 1 vertical period in which one screen is displayed. The gateshift clock signal GSC is a timing control signal that is input to ashift resistor installed in the gate drive circuit 13 to sequentiallyshift the gate start pulse GSP, and has a pulse width corresponding to aturned-on period of the thin film transistor. The gate output enablesignal GOE controls an output of the gate drive circuit 13.

The data drive circuit 12 latches the digital video data RGB under thecontrol of the timing controller 11 and converts the digital video dataRGB into positive and negative gamma compensation voltages to generatepositive and negative data voltages. The positive and negative datavoltages are supplied to the data lines D1 to Dm. The data drive circuit12 inverts a polarity of the data voltage in response to the polaritycontrol signal POL. The data drive circuit 12 time-divides R-datavoltage of the odd-numbered pixels and G-data voltage of theodd-numbered pixels to supply the R-data voltage and the G-data voltageto the odd-numbered data lines D1, D3, . . . and Dm-1 during one-halfhorizontal period. Further, the data drive circuit 12 time-dividesB-data voltage of the odd-numbered pixels and R-data voltage of theeven-numbered pixels to supply the B-data voltage and the R-data voltageto the even-numbered data lines D2, D4, . . . , and Dm during one-halfhorizontal period.

The gate drive circuit 13 includes a shift resistor, a level shifter forconverting an output signal of the shift resistor into a signal having aswing width suitable for a TFT drive of the liquid crystal cell Clc, anoutput buffer, and the like to sequentially supply the gate pulses tothe gate lines G1 to Gn. A gate high voltage of the gate pulse issupplied to the gate lines G1 to Gn during one-half horizontal period soas to be synchronized with the data voltage.

FIG. 3 is an equivalent circuit diagram showing a structure of the lowerglass substrate of the liquid crystal display panel 10, the polarity ofthe data voltage, and a charge path. The structure of the lower glasssubstrate shown in FIG. 3 shows not the whole of the pixel array but thepixel array formed on first to third lines LINE#1 to LINE#3 in an areaof the odd-numbered pixel.

As shown in FIG. 3, pixel electrodes PIX1 and PIX3 of R-liquid crystalcells are formed on R-column on the left side of a first data line D1 ina column direction, and pixel electrodes PIX2 and PIX4 of G-liquidcrystal cells are formed on G-column on the right side of the first dataline D1 in the column direction.

The first data line D1 is connected to the pixel electrodes PIX1 andPIX3 on the R-column via thin film transistors TFT1 and TFT3 on theR-column, and is connected to the pixel electrodes PIX2 and PIX4 on theG-column via thin film transistors TFT2 and TFT4 on the G-column.

Common lines COM for supplying the common voltage Vcom to the storageelectrode are formed parallel to the data lines D1 to Dm on theoutermost left side and the outermost right side of the pixel array. Thecommon lines COM are formed between the adjacent pixel electrodespositioned between the adjacent data lines in a direction parallel tothe data lines D1 to Dm. The common lines COM are formed between theR-column and the G-column in an area of the even-numbered pixel in adirection parallel to the data lines D1 to Dm. The storage electrode andthe common lines COM are spaced apart from each other at a predeterminedinterval, for example, at an interval of k lines, where k is a naturalnumber equal to larger than 4. The storage electrode and the commonlines COM are electrically connected to each other through a contacthole passing through an insulating layer.

The first gate line G1 is formed between first and second lines LINE#1and LINE#2 in a line direction perpendicular to the column direction andis connected to a gate electrode of the first thin film transistor TFT1.The second gate line G2 is formed between the first and second linesLINE#1 and LINE#2 in the line direction and is connected to a gateelectrode of the second thin film transistor TFT2. The second gate lineG2 underlying the first gate line G1 crosses the first gate line G1 tobe connected to the gate electrode of the second thin film transistorTFT2. Accordingly, because a distance Δ2 between the second gate line G2and the first pixel electrode PIX1 increases as compared with therelated art distance Δ1 (i.e., Δ2>Δ1), electrical coupling is scarcelygenerated between the second gate line G2 and the first pixel electrodePIX1. It is advantageous that the distance Δ2 is 20 μm to 40 μm inconsideration of a gate high voltage equal to or higher than 20V so thatthe electrical coupling is scarcely generated between the second gateline G2 and the first pixel electrode PIX1.

Third and fourth gate lines G3 and G4 are formed between a second lineLINE#2 and a third line LINE#3 underlying the second line LINE#2 in theline direction. The third gate line G3 is connected to a gate electrodeof a fourth thin film transistor TFT4. The fourth gate line G4underlying the third gate line G3 crosses the third gate line G3 to beconnected to a gate electrode of a third thin film transistor TFT3.Accordingly, because a distance Δ2 between the fourth gate line G4 andthe fourth pixel electrode PIX4 increases as compared with the relatedart distance Δ1 (i.e., Δ2>Δ1), electrical coupling is scarcely generatedbetween the fourth gate line G4 and the fourth pixel electrode PIX4. Itis advantageous that the distance Δ2 is 20 μm to 40 μm.

A voltage charge path CP (i.e., the charge order of the data voltage) ofthe liquid crystal cells of the R-column and the liquid crystal cells ofthe G-column to which the R-data voltage and the G-data voltage arealternately supplied through the first data line D1 is determined bysupply order of the gate pulses to the first to fourth gate lines G1 toG4 and the first to fourth thin film transistors TFT1 to TFT4 that aresequentially turned on by the gate pulses. The charge order of theliquid crystal cells of the R-column and the liquid crystal cells of theG-column in the odd-numbered frame will be described later.

As shown in FIGS. 3 and 4, the gate pulses are sequentially applied tothe gate lines G1 to G4, and different data voltages having the samepolarity are respectively applied to the data lines D1 and D2 during 1horizontal period. Polarities of the data voltages are inverted every 1horizontal period.

A first gate pulse is applied to the first gate line G1, and the firstthin film transistor TFT1 is turned on by the first gate pulse. Hence,positive R-data voltage received from the first data line D1 is suppliedto the first pixel electrode PIX1 positioned on the left side of thefirst data line D1 on the first line LINE#1. Next, a second gate pulseis applied to the second gate line G2. Because the distance Δ2 betweenthe first pixel electrode PIX1 and the second gate line G2 is long, avoltage of the storage capacitor Cst connected to the first pixelelectrode PIX1, that has been already charged to the data voltage, isscarcely affected by the gate high voltage of the second gate pulse anddoes not change. The second thin film transistor TFT2 is turned on bythe second gate pulse. Hence, positive G-data voltage received from thefirst data line D1 is supplied to the second pixel electrode PIX2positioned on the right side of the first data line D1 on the first lineLINE#1.

Sequential to the second gate pulse, a third gate pulse is applied tothe third gate line G3, and the fourth thin film transistor TFT4 isturned on by the third gate pulse. Hence, negative G-data voltagereceived from the first data line D1 is supplied to the fourth pixelelectrode PIX4 positioned on the right side of the first data line D1 onthe second line LINE#2. Next, a fourth gate pulse is applied to thefourth gate line G4. Because the distance Δ2 between the fourth pixelelectrode PIX4 and the fourth gate line G4 is long, a voltage of thestorage capacitor Cst connected to the fourth pixel electrode PIX4, thathas been already charged to the data voltage, is scarcely affected bythe gate high voltage of the fourth gate pulse and does not change. Thethird thin film transistor TFT3 is turned on by the fourth gate pulse.Hence, negative R-data voltage received from the first data line D1 issupplied to the third pixel electrode PIX3 positioned on the left sideof the first data line D1 on the second line LINE#2.

A polarity of the data voltage in even-numbered frames is inverted to apolarity opposite a polarity of the data voltage in odd-numbered frames.

As above, the liquid crystal display according to the exemplaryembodiment of the invention reduces the electrical coupling between thepixel electrode and the gate line by lengthening the distance Δ2 betweenthe pixel electrode and the gate line and minimizes a change in thevoltage to which the liquid crystal cell is charged, thereby improvingthe display quality. Furthermore, in the Z-shaped inversion system, whenthe polarity of the data voltage is inverted every 2 dots (2 liquidcrystal cells) in the line direction and is inverted every 1 dot in thecolumn direction, color distortion, in which any one color of a displayimage is more remarkably seen than the other colors, may appear.However, the liquid crystal display according to the exemplaryembodiment of the invention changes the charge order of the datavoltage, thereby reducing the color distortion. For example, as shown inFIG. 4, during a horizontal period, the first pixel electrode PIX1 ischarged to the positive R-data voltage, and then the positive G-datavoltage is supplied to the second pixel electrode PIX2. Because thefirst pixel electrode PIX1 is charged to the positive R-data voltagefrom the negative data voltage that has been already charged, the chargeamount of first pixel electrode PIX1 is less than the charge amount ofsecond pixel electrode PIX2 during the 1 horizontal period. During anext horizontal period, the fourth pixel electrode PIX4 is charged tothe negative G-data voltage, and then the negative R-data voltage issupplied to the third pixel electrode PIX3. Because the fourth pixelelectrode PIX4 is charged to the negative G-data voltage from thepositive data voltage that has been already charged, the charge amountof fourth pixel electrode PIX4 is less than the charge amount of thirdpixel electrode PIX3 during the next 1 horizontal period. Accordingly,because an average voltage of the R-liquid crystal cells and an averagevoltage of the G-liquid crystal cells are substantially equal to eachother on the first and second lines LINE#1 and LINE#2, any one color ofthe display image is not remarkably seen. In FIG. 4, “W” indicates avoltage level of the pixel electrode whose the charge amount is small,and “S” indicates a voltage level of the pixel electrode whose thecharge amount is relatively large.

FIGS. 5 and 6 show a polarity of the data voltage and a charge path ofthe data voltage. The structure of the lower glass substrate of theliquid crystal display panel 10 in an odd-numbered line, namely, thefirst line LINE#1 is substantially the same as that in the first lineLINE#1 shown in FIG. 3. In an even-numbered line LINE#2, unlike thestructure shown in FIG. 3, the third gate line G3 is formed between thesecond and third lines LINE#2 and LINE#3 in the line direction and isconnected to the gate electrode of the third thin film transistor TFT3on the left side of the first data line D1. The fourth gate line G4underlying the third gate line G3 is formed between the second and thirdlines LINE#2 and LINE#3 and crosses the third gate line G3 to beconnected to the gate electrode of the fourth thin film transistor TFT4on the right side of the first data line D1.

As shown in FIGS. 5 and 6, the gate pulses synchronized with the datavoltage are sequentially applied to the gate lines G1 to G4, and thedata voltages whose polarities are inverted every one-half horizontalperiod are respectively applied to the data lines D1 and D2. A firstgate pulse is applied to the first gate line G1, and the first thin filmtransistor TFT1 is turned on by the first gate pulse. Hence, positiveR-data voltage received from the first data line D1 is supplied to thefirst pixel electrode PIX1 positioned on the left side of the first dataline D1 on the first line LINE#1. Next, a second gate pulse is appliedto the second gate line G2. Because the distance Δ2 between the firstpixel electrode PIX1 and the second gate line G2 is long, a voltage ofthe storage capacitor Cst connected to the first pixel electrode PIX1,that has been already charged to the data voltage, is scarcely affectedby the gate high voltage of the second gate pulse and does not change.The second thin film transistor TFT2 is turned on by the second gatepulse. Hence, negative G-data voltage received from the first data lineD1 is supplied to the second pixel electrode PIX2 positioned on theright side of the first data line D1 on the first line LINE#1.

Sequential to the second gate pulse, a third gate pulse is applied tothe third gate line G3, and the third thin film transistor TFT3 isturned on by the third gate pulse. Hence, negative R-data voltagereceived from the first data line D1 is supplied to the third pixelelectrode PIX3 positioned on the left side of the first data line D1 onthe second line LINE#2. Next, a fourth gate pulse is applied to thefourth gate line G4. Because the distance Δ2 between the third pixelelectrode PIX3 and the fourth gate line G4 is long, a voltage of thestorage capacitor Cst connected to the third pixel electrode PIX3, thathas been already charged to the data voltage, is scarcely affected bythe gate high voltage of the fourth gate pulse and does not change. Thefourth thin film transistor TFT4 is turned on by the fourth gate pulse.Hence, positive G-data voltage received from the first data line D1 issupplied to the fourth pixel electrode PIX4 positioned on the right sideof the first data line D1 on the second line LINE#2.

FIGS. 7 and 8 are a plane view and a cross-sectional view showing indetail the lower glass substrate of the liquid crystal display panel 10shown in FIG. 3, respectively.

As shown in FIGS. 7 and 8, in the exemplary embodiment of the invention,a gate metal is formed on the lower glass substrate GLS using adeposition method such as sputtering. The gate metal is patterned usinga photolithography process to form the gate lines G1 to G4, the gateelectrodes G of the thin film transistors connected to the gate lines G1to G4, a storage electrode ST, and gate metal patterns (not shown)including a lower electrode of a gate pad. The storage electrode SToverlaps 3 edges of the pixel electrode including a left edge, a rightedge, and a bottom end edge of the pixel electrode, and overlaps theunderlying gate lines G2 and G4 in each gate line pair (i.e., the gateline pairs G1 and G2 and G3 and G4). The storage electrode ST overlapsthe common line COM with gate insulating layers to be described laterinterposed therebetween, and is connected to the common line COM throughthe contact hole to receive the common voltage from the common line COM.The lower electrode of the gate pad is formed at ends of the gate linesG1 to G4 and is connected to an upper electrode of the gate pad. Thegate metal may include aluminum (Al)-based metal including Al,aluminum/neodymium (Al/Nd).

First and second gate insulating layers GI1 and GI2 are sequentiallydeposited on the lower glass substrate and the gate metal patterns usingan inorganic insulating material such as SiO₂, SiNx to cover the gatemetal patterns. Then, first contact holes passing through the first andsecond gate insulating layers GI1 and GI2 are formed using thephotolithography process. The first contact holes are spaced apart fromeach other at a predetermined distance to expose the storage electrodesST at the predetermined distance. Subsequently, an active semiconductorpattern ACT including an active layer and an ohmic contact layer isformed on the second gate insulating layer GI2 using thephotolithography process. Further, source/drain metal patterns includingthe data lines D1 and D2, a source electrode S and a drain electrode Dof the thin film transistor connected to the data lines D1 and D2, thecommon line COM connected to the storage electrode ST through the firstcontact hole, a lower electrode of a common line pad connected to an endof the common line COM, and a lower electrode of the data pad (notshown) are formed on the active semiconductor pattern ACT using thephotolithography process. As described above, the first contact holesare spaced apart from each other at an interval of k lines to connectthe storage electrode ST to the common line COM, where k is a naturalnumber equal to or larger than 4. The drain electrodes are connected tothe pixel electrodes PIX1 to PIX4, and some of the drain electrodescross the gate lines and are patterned in the form of boots so as to beconnected to the pixel electrodes PIX1 to PIX4. The active layer of theactive semiconductor pattern ACT is formed of non-doped amorphoussilicon, and the ohmic contact layer of the active semiconductor patternACT is formed of amorphous silicon doped with N-type or P-type impurity.The lower electrode of the data pad is formed at ends of the data linesD1 and D2 and is connected to the upper electrode of the data pad. Thesource/drain metal patterns may be formed of metal such as molybdenum(Mo) and copper (Cu).

Subsequently, a protective layer PASSI formed of an inorganic or organicinsulating material is formed on the lower glass substrate and thesource/drain metal patterns to cover the source/drain metal patterns. Asecond contact hole that passes through the protective layer PASSI toexpose the drain electrode D, a third contact hole that passes throughthe protective layer PASSI to expose the lower electrode of the datapad, a fourth contact hole that passes through the protective layerPASSI and the gate insulating layers GI1 and GI2 to expose the lowerelectrode of the gate pad, and a fifth contact hole that passes throughthe protective layer PASSI to expose the lower electrode of the commonline pad are formed using the photolithography process.

Subsequently, a transparent conductive layer selected from indium tinoxide (ITO), tin oxide (TO), indium tin zinc oxide (ITZO), and indiumzinc oxide (IZO) is deposited on the protective layer PASSI using adeposition method such as sputtering, and then is patterned using thephotolithography process to form transparent conductive layer patterns.The transparent conductive layer patterns are connected to the drainelectrode D through the second contact hole. The transparent conductivelayer patterns include the pixel electrodes PIX1 to PIX4 overlapping thegate line and the storage electrode ST, the upper electrode of the datapad connected to the lower electrode of the data pad through the thirdcontact hole, the upper electrode of the gate pad connected to the lowerelectrode of the gate pad through the fourth contact hole, and the upperelectrode of the common line pad connected to the lower electrode of thecommon line pad through the fifth contact hole. The upper electrode ofthe data pad is connected to an output pad of a source driver ICconstituting the data drive circuit 12 to transmit the data voltage tothe data lines D1 and D2 through the lower electrode of the data pad.The upper electrode of the gate pad is connected to an output pad of agate driver IC constituting the gate drive circuit 13 to transmit thegate pulses to the gate lines G1 to G4 through the lower electrode ofthe gate pad. The upper electrode of the common line pad transmits thecommon voltage Vcom received from a common voltage source to the commonline COM through the lower electrode of the common line pad.

The storage capacitor Cst includes the pixel electrodes PIX1 to PIX4 andthe storage electrode ST that overlap each other with an inorganic ororganic insulating layer interposed therebetween. The storage capacitorCst is formed between the pixel electrodes PIX1 to PIX4 and the gatelines that overlap each other with an inorganic or organic insulatinglayer interposed therebetween. Because the storage capacitor Cst isformed along 4 sides of each of the pixel electrodes PIX1 to PIX4, acapacitance of the storage capacitor Cst greatly increases. Hence, thestorage capacitor Cst can be stably charged to the data voltage.

It is easy to repair the defective liquid crystal cell as a dark defectcell in a repair process because of a portion of the storage capacitorCst overlapping the gate line. For example, it is assumed that theliquid crystal display is driven in a normally white mode in which thelower a voltage of the liquid crystal cell is, the higher atransmittance of the liquid crystal cell is. If the data voltage is notsupplied to the third pixel electrode PIX3 because of the defectivethird thin film transistor TFT3, bright defect occurs in the thirdliquid crystal cell including the third pixel electrode PIX3 in aninspection process. In this case, the drain electrode D of the thirdthin film transistor TFT3 is cut along cut line CUT-CUT using a laserbeam in a repair process to open a current path between the third thinfilm transistor TFT3 and the third pixel electrode PIX3. Subsequently,in the storage capacitor Cst, an upper end of the third thin filmtransistor TFT3 overlapping the second gate line G2, the protectivelayer PASSI underlying the third thin film transistor TFT3, and the gateinsulating layers GI1 and GI2 are melted using a laser beam toelectrically connect an upper end of the third pixel electrode PIX3 to aportion of the second gate line G2 overlapping the third pixel electrodePIX3. As a result, a gate low voltage of about −5V is applied to thethird pixel electrode PIX3 through the second gate line G2, and thecommon voltage of about 5V is applied to the common electrode 2 of theupper glass substrate opposite the third pixel electrode PIX3. Hence,about 10V is applied to the third liquid crystal cell, and thus thethird liquid crystal cell is repaired as a dark defect cell representinga black gray level. The gate low voltage is a voltage supplied to thegate lines G1 to G4 during a non-scanning period and is lower than aturn-on voltage of the TFT. The gate high voltage is a voltage of thegate pulse supplied to the gate lines G1 to G4 during scan time, namely,one-half horizontal period and is equal to or higher than the turn-onvoltage of the TFT.

The liquid crystal display according to the exemplary embodiment doesnot change the voltage of the storage capacitor and can sufficientlysecure the aperture ratio in the Z-shaped inversion system, in which thedata voltages are alternately charged in zigzag, without a reduction inthe aperture ratio by increasing the distance between the pixelelectrode and the gate line, thereby improving the display quality.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the embodiments of theinvention without departing from the spirit or scope of the invention.Thus, it is intended that embodiments of the invention cover themodifications and variations of this invention provided they come withinthe scope of the appended claims and their equivalents.

1. A liquid crystal display comprising: a data line that is arranged ina column direction to receive a data voltage; a first pixel electrodethat is positioned on the left side of the data line on a first line; asecond pixel electrode that is positioned on the right side of the dataline in a second line underlying the first line; a first gate line thatis arranged between the first line and the second line in a linedirection perpendicular to the column direction; a second gate line thatis arranged between the first line and the second line in the linedirection, the second gate line underlying the first gate line; a firstthin film transistor that is positioned on the left side of the dataline on the first line to supply a first data voltage received from thedata line to the first pixel electrode in response to a gate pulsereceived from the first gate line; and a second thin film transistorthat is positioned on the right side of the data line on the first line,crosses the first gate line to be connected to the second pixelelectrode, and supplies a second data voltage received from the dataline to the second pixel electrode in response to a gate pulse receivedfrom the second gate line.
 2. The liquid crystal display of claim 1,further comprising: a third gate line that is arranged between thesecond line and a third line underlying the second line in the linedirection; a fourth gate line that is arranged between the second lineand the third line in the line direction, the fourth gate lineunderlying the third gate line; a third pixel electrode that ispositioned on the left side of the data line on the second line; afourth pixel electrode that is positioned on the right side of the dataline on the second line; a third thin film transistor that is positionedon the left side of the data line on the second line, crosses the thirdgate line to be connected to the third pixel electrode, and supplies afourth data voltage received from the data line to the third pixelelectrode in response to a gate pulse received from the fourth gateline; and a fourth thin film transistor that is positioned on the rightside of the data line on the second line to supply a third data voltagereceived from the data line to the fourth pixel electrode in response toa gate pulse received from the third gate line.
 3. The liquid crystaldisplay of claim 2, further comprising: a storage electrode thatoverlaps a left edge, a right edge, and a bottom end edge of each of thefirst to fourth pixel electrodes with an insulating layer interposedbetween the storage electrode and each pixel electrode; and a commonline that is arranged in the column direction to supply a common voltageto the storage electrode.
 4. The liquid crystal display of claim 3,further comprising a storage capacitor that is connected to each of thefirst to fourth pixel electrodes to hold a voltage of each pixelelectrode, wherein the storage capacitor includes a first storagecapacitor including the 3 edges of each pixel electrode and the storageelectrode that overlap each other with an insulating layer interposedbetween the storage electrode and each pixel electrode, and a secondstorage capacitor including a top end edge of each pixel electrode andthe gate lines that overlap each other with the insulating layerinterposed between the gate lines and each pixel electrode.
 5. Theliquid crystal display of claim 1, further comprising: a third gate linethat is arranged between the second line and a third line underlying thesecond line in the line direction; a fourth gate line that is arrangedbetween the second line and the third line in the line direction, thefourth gate line underlying the third gate line; a third pixel electrodethat is positioned on the left side of the data line on the second line;a fourth pixel electrode that is positioned on the right side of thedata line on the second line; a third thin film transistor that ispositioned on the left side of the data line on the second line tosupply a third data voltage received from the data line to the thirdpixel electrode in response to a gate pulse received from the third gateline; and a fourth thin film transistor that is positioned on the rightside of the data line on the second line, crosses the third gate line tobe connected to the fourth pixel electrode, and supplies a fourth datavoltage received from the data line to the fourth pixel electrode inresponse to a gate pulse received from the fourth gate line.
 6. Theliquid crystal display of claim 5, further comprising: a storageelectrode that overlaps a left edge, a right edge, and a bottom end edgeof each the first to fourth pixel electrodes with an insulating layerinterposed between the storage electrode and each pixel electrode; and acommon line that is arranged in the column direction to supply a commonvoltage to the storage electrode.
 7. The liquid crystal display of claim6, further comprising a storage capacitor that is connected to each ofthe first to fourth pixel electrodes to hold a voltage of each pixelelectrode, wherein the storage capacitor includes a first storagecapacitor including the 3 edges of each pixel electrode and the storageelectrode that overlap each other with an insulating layer interposedbetween the storage electrode and each pixel electrode, and a secondstorage capacitor including a top end edge of each pixel electrode andthe gate lines that overlap each other with the insulating layerinterposed between the gate lines and each pixel electrode.